VBsemi SI2312CDS-T1-GE3 N-MOSFET, 20V 6A, SOT23
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Product detailed description
Universal MOSFET transistor with N-type junction suitable for digital applications.
Specifications:
- Voltage V DS : 20V
- Current I D : 6A max.
- Voltage VGS(th): 0.45 - 1V
- RDS(on) on-state resistance: 0.028Ω at VGS = 4.5V,ID = 5.0A
- Housing: SOT23
Included in delivery:
- 1pcs VBsemi SI2312CDS-T1-GE3 N-MOSFET, 20V 6A, SOT23
Remark:
- This product is not a standalone functional unit and may require professional installation.
- Product images are for illustration purposes only and may sometimes differ from the actual appearance of the item. However, this does not change its basic properties.
Additional parameters
Category: | Semiconductors |
---|---|
Warranty: | 2 years |
Weight: | 0.001 kg |
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T
maximální proud
Tomáš
Možná se pletu, ale datasheet hovoří o 6 A jako maximu pouzdra. Pro stálý proud uvádí 5 A po dobu 5 s.
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